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| inchange semiconductor isc product specification isc silicon npn power transistor BU134 description collector-emitter breakdown voltage- : v (br)ceo = 350v(min.) collector saturation voltage- : v ce(sat) = 1.0v(max.)@ i c = 3a high speed switching applications designed for use in color tv receiver?s chopper supply. absolute maximum ratings(t a =25 ) symbol parameter value unit v cbo collector-base voltage 500 v v ceo collector-emitter voltage 350 v v ebo emitter-base voltage 8 v i c collector current-continuous 4 a i cm collector current-peak 7 a i b b base current-continuous 1 a p c collector power dissipation @ t c = 25 85 w t j junction temperature 200 t stg storage temperature range -65~200 thermal characteristics symbol parameter max unit r th j-c thermal resistance, junction to case 2.0 /w isc website www.iscsemi.cn www.datasheet.co.kr datasheet pdf - http://www..net/
inchange semiconductor isc product specification isc silicon npn power transistor BU134 electrical characteristics t c =25 unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c = 30ma; i b = 0 350 v v ce( sat ) collector-emitter saturation voltage i c = 3a; i b = 0.3a b 1.0 v v be( sat ) base-emitter saturation voltage i c = 3a; i b = 0.3a b 1.5 v v be( on ) base-emitter on voltage i c = 3a; v ce = 5v 1.5 v i ces collector cutoff current v ce = 400v; v be = 0 1.0 ma i ebo emitter cutoff current v eb = 8v; i c = 0 1.0 ma h fe dc current gain i c = 1a; v ce = 5v 30 120 f t current-gain?bandwidth product i c = 0.5a; v ce = 5v 10 mhz c ob output capacitance i e = 0; v cb = 10v; f test = 1mhz 120 pf tf fall time i c = 3a; i b1 = -i b2 = 0.6a 1.0 s isc website www.iscsemi.cn 2 www.datasheet.co.kr datasheet pdf - http://www..net/ |
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